Organic electroluminescence display device

ABSTRACT

An organic electroluminescence display device includes: a substrate; a first electrode including a first sub-electrode and a second sub-electrode spaced apart from each other and on the substrate; a first light emitting unit on the first electrode; a charge generation unit on the first light emitting unit; a second light emitting unit on the charge generation unit; and a second electrode on the second light emitting unit, wherein the first light emitting unit comprises a first light emitting layer correspondingly on the first sub-electrode; and a second light emitting layer correspondingly on the second sub-electrode, wherein the second light emitting unit comprises a third light emitting layer correspondingly on the first light emitting layer; and a fourth light emitting layer correspondingly on the second light emitting layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/383,362, filed Apr. 12, 2019, which claims priority to and thebenefit of Korean Patent Application No. 10-2018-0047519, filed Apr. 24,2018, the entire content of both of which is incorporated herein byreference.

BACKGROUND

As an image display device, an organic electroluminescence displaydevice has been actively developed. Organic electroluminescence displaydevices are different from liquid crystal display devices and areso-called self-luminous organic electroluminescence display devices thatrecombine the holes and electrons injected from a first electrode and asecond electrode in a light emitting layer to display images byutilizing a emitting a light emitting material.

An organic light emitting display device including a first electrode, ahole transport layer on the first electrode, a light emitting layer onthe hole transport layer, an electron transport layer on the lightemitting layer, and a second electrode on the electron transport layermay be utilized as an organic electroluminescence display device, forexample. Holes are injected from the first electrode, and the injectedholes move into the hole transport layer and are injected into the lightemitting layer. On the other hand, electrons are injected from thesecond electrode, and the injected electrons move through the electrontransport layer and are injected into the light emitting layer. Therecombination of holes and electrons injected into the light emittinglayer generates excitons in the light emitting layer. The organicelectroluminescence display emits light using light generated when theexcitons fall back to the ground state.

The above information discussed in the present Background section isonly for enhancement of understanding of the background of the inventionand therefore it may contain information that does not constitute priorart.

SUMMARY

Aspects of some example embodiments of the present disclosure relate toan organic electroluminescence display device, for example, an organicelectroluminescence display device including two light emitting unitsand a charge generation unit between two light emitting units.

Aspects of some example embodiments of the present disclosure include anorganic electroluminescence display device of high efficiency and longlife.

Aspects of some example embodiments of the present disclosure include anorganic electroluminescence display device having excellent processingefficiency.

Aspects of some example embodiments of the present disclosure include anorganic electroluminescence display device including: a substrate; afirst electrode including a first sub-electrode and a secondsub-electrode spaced apart from each other and on the substrate; a firstlight emitting unit on the first electrode; a charge generation unit onthe first light emitting unit; a second light emitting unit on thecharge generation unit; and a second electrode on the second lightemitting unit, wherein the first light emitting unit includes a firstlight emitting layer correspondingly on the first sub-electrode; and asecond light emitting layer correspondingly on the second sub-electrode,wherein the second light emitting unit includes a third light emittinglayer correspondingly on the first light emitting layer; and a fourthlight emitting layer correspondingly on the second light emitting layer,wherein the charge generation unit includes: an n-type charge generationlayer on the first light emitting layer and the second light emittinglayer; and a p-type charge generation layer including a first p-typecharge generation layer on the n-type charge generation layer andcorrespondingly on the first light emitting layer, and a second p-typecharge generation layer correspondingly on the second light emittinglayer.

In an embodiment, the first light emitting layer and the third lightemitting layer may be layers that emit light of the same color, thesecond light emitting layer and the fourth light emitting layer may belayers that emit light of the same color, and the first light emittinglayer and the second light emitting layer may be layers that emit lightof different colors.

In an embodiment, the first p-type charge generation layer and thesecond p-type charge generation layer may be spaced apart from eachother.

In an embodiment, the first electrode may further include a thirdsub-electrode spaced apart from the first sub-electrode and the secondsub-electrode, the first light emitting unit may further include a fifthlight emitting layer correspondingly on the third sub-electrode, thesecond light emitting unit may further include a sixth light emittinglayer correspondingly on the fifth light emitting layer, and the p-typecharge generation layer may further include a third p-type chargegeneration layer correspondingly on the fifth light emitting layer.

In an embodiment, the fifth light emitting layer and the sixth lightemitting layer may be layers that emit the same color, and the fifthlight emitting layer may be a layer that emits a different color fromeach of the first light emitting layer and the second light emittinglayer.

In an embodiment, each of the first light emitting layer and the thirdlight emitting layer may be a red light emitting layer, each of thesecond light emitting layer and the fourth light emitting layer may be agreen light emitting layer, and each of the fifth light emitting layerand the sixth light emitting layer may be a blue light emitting layer.

In an embodiment, a thickness of the first light emitting layer may begreater than a thickness of the second light emitting layer, and thethickness of the second light emitting layer may be greater than athickness of the fifth light emitting layer, and a thickness of thethird light emitting layer may be greater than a thickness of the fourthlight emitting layer and the thickness of the fourth light emittinglayer may be greater than a thickness of the sixth light emitting layer.

In an embodiment, the fifth light emitting layer may be a layer thatemits a first blue light having a first central wavelength, and thesixth light emitting layer may b a layer that emits a second blue lighthaving a second central wavelength different from the first centralwavelength.

In an embodiment, the charge generation unit may further include abuffer layer between the n-type charge generation layer and the p-typecharge generation layer.

In an embodiment, the n-type charge generation layer may have a stepdifference and each of the first p-type charge generation layer and thesecond p-type charge generation layer may have no step difference.

In an embodiment, the first light emitting unit may further include: afirst hole transport region below the first light emitting layer and thesecond light emitting layer, and on the first sub-electrode and thesecond sub-electrode; and a first electron transport region on the firstlight emitting layer and on the second light emitting layer and belowthe charge generation unit, wherein the second light emitting unit mayfurther include: a second hole transport region below the third lightemitting layer and the fourth light emitting layer, and on the chargegeneration unit; and a second electron transport region on the thirdlight emitting layer and the fourth light emitting layer, and below thesecond electrode.

In an embodiment, the n-type charge generation layer may be doped withan inorganic material, and the p-type charge generation layer may bedoped with an organic material or an inorganic material.

In an embodiment, the p-type charge generation layer may be doped with ametal halide.

In an embodiment, a thickness of the first p-type charge generationlayer and a thickness of the second p-type charge generation layer maybe different from each other.

In an embodiment, the n-type charge generation layer may include ann-type dopant and the p-type charge generation layer includes a p-typedopant, a doping ratio of the n-type dopant may be 1 wt % to 10 wt %, adoping ratio of the p-type dopant may be 2 wt % to 15 wt %, and thedoping ratios of the p-type dopants in the first p-type chargegeneration layer and the second p-type charge generation layer may bedifferent from each other.

In some example embodiments of the inventive concept, an organicelectroluminescence display device includes: a substrate where a firstlight emitting region, a second light emitting region, and a third lightemitting region spaced apart from each other are defined; a firstelectrode including a first sub-electrode on the substrate andcorresponding to the first light emitting region; a second sub-electrodecorresponding to the second light emitting region; and a thirdsub-electrode corresponding to the third light emitting region; a firstlight emitting unit including a first sub-light emitting layer on thefirst electrode and corresponding to the first light emitting region; asecond sub-light emitting layer corresponding to the second lightemitting region; and a third sub-light emitting layer corresponding tothe third light emitting region, a charge generation unit on the firstlight emitting unit; a second light emitting unit including a fourthsub-light emitting layer corresponding to the first light emittingregion; a fifth sub-light emitting layer corresponding to the secondlight emitting region; and a sixth sub-light emitting layercorresponding to the third light emitting region, and the second lightemitting unit is on the charge generation unit; and a second electrodeon the second light emitting unit, wherein the charge generation unitincludes: an n-type charge generation layer commonly on the first lightemitting region, the second light emitting region, and the third lightemitting region; and a p-type charge generation layer including a firstp-type charge generation layer corresponding to the first light emittingregion; a second p-type charge generation layer corresponding to thesecond light emitting region; and a third p-type charge generation layercorresponding to the third light emitting region, and the p-type chargegeneration layer is on the n-type charge generation layer.

In an embodiment, the first p-type charge generation layer, the secondp-type charge generation layer, and the third p-type charge generationlayer may be spaced apart from each other.

In an embodiment, each of the first sub-light emitting layer and thefourth sub-light emitting layer may be a red light emitting layer, eachof the second sub-light emitting layer and the fifth sub-light emittinglayer may be a green light emitting layer, and each of the thirdsub-light emitting layer and the sixth sub-light emitting layer may be ablue light emitting layer.

In an embodiment, a thickness of the first sub-light emitting layer maybe greater than a thickness of the second sub-light emitting layer, andthe thickness of the second sub-light emitting layer may be greater thana thickness of the third light emitting layer, and a thickness of thefourth sub-light emitting layer may be greater than a thickness of thefifth sub-light emitting layer, and the thickness of the fifth sub-lightemitting layer may be greater than a thickness of the sixth sub-lightemitting layer.

In an embodiment, the charge generation unit may further include abuffer layer between the n-type charge generation layer and the p-typecharge generation layer.

In an embodiment, the n-type charge generation layer may have a stepdifference, and each of the first p-type charge generation layer, thesecond p-type charge generation layer, and the third p-type chargegeneration layer may have no step difference.

In an embodiment, the n-type charge generation layer may be doped withan inorganic material, and the p-type charge generation layer may bedoped with an organic material.

In an embodiment, a thickness of the first p-type charge generationlayer, a thickness of the second p-type charge generation layer, and athickness of the third p-type charge generation layer may be differentfrom each other.

In an embodiment, the n-type charge generation layer may include ann-type dopant and the p-type charge generation layer includes a p-typedopant, a doping ratio of the n-type dopant may be 1 wt % to 10 wt %, adoping ratio of the p-type dopant may be 2 w t% to 15 wt %, and thedoping ratios of the p-type dopants in the first p-type chargegeneration layer, the second p-type charge generation layer, and thethird p-type charge generation layer may be different from each other.

BRIEF DESCRIPTION OF THE FIGURES

The accompanying drawings are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification. The drawings illustrate aspectsof some example embodiments of the inventive concept and, together withthe description, serve to explain some aspects of some exampleembodiments of the inventive concept. In the drawings:

FIG. 1 is a perspective view of an organic electroluminescence displaydevice according to some example embodiments of the inventive concept;

FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments of the inventive concept;

FIG. 3 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments of the inventive concept;

FIG. 4 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments of the inventive concept;

FIG. 5 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments of the inventive concept;

FIG. 6 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments of the inventive concept;

FIG. 7 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments of the inventive concept;

FIG. 8 is a schematic cross-sectional view taken along a line I-I′ ofFIG. 1 according to some example embodiments of the inventive concept;

FIGS. 9 to 11 are cross-sectional views sequentially illustrating amethod of manufacturing a charge generation unit included in an organicelectroluminescence display device according to some example embodimentsof the inventive concept;

FIG. 12 is an equivalent circuit diagram of a pixel according to someexample embodiments of the inventive concept;

FIG. 13 is a cross-sectional view of a display panel according to someexample embodiments of the inventive concept; and

FIG. 14 is a graph showing a change in conductivity depending on thedoping concentration of each of an n-type charge generation layer and ap-type charge generation layer according to some example embodiments ofthe inventive concept.

DETAILED DESCRIPTION

Aspects, features, and characteristics of some example embodiments ofthe inventive concept will be more easily understood through exampleembodiments relating to the accompanying drawings. The inventive conceptmay, however, be embodied in different forms and should not be construedas limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be more thoroughand more complete, and will more fully convey the scope of some exampleembodiments of the inventive concept to those skilled in the art.

Like reference numerals refer to like elements throughout the drawings.In the accompanying drawings, the dimensions of structures are enlargedthan they actually are for the clarity of the inventive concept. It willbe understood that the terms “first” and “second” are used herein todescribe various components but these components should not be limitedby these terms. The above terms are used only to distinguish onecomponent from another. For example, a first component may be referredto as a second component and vice versa without departing from the scopeof the inventive concept. The singular expressions include pluralexpressions unless the context clearly dictates otherwise.

Additionally, in various embodiments of the inventive concept, the terms“include,” “comprise,” “including,” or “comprising,” specify a property,a region, a fixed number, a step, a process, an element and/or acomponent but do not exclude other properties, regions, fixed numbers,steps, processes, elements and/or components.

Additionally, it will be understood that when a portion such as a layer,a film, an area, and a plate is referred to as being ‘on’ anotherportion, it can be directly on the other portion, or an interveningportion can also be present. On the other hand, it will be understoodthat when a portion such as a layer, a film, an area, and a plate isreferred to as being ‘below’ another portion, it can be directly belowthe other portion, or an intervening portion can also be present.

On the other hand, “directly disposed” or “directly on” in the presentapplication may mean that there is no layer, film, region, plate or thelike added between the portion of the layer, film, region, plate or thelike and another portion. For example, “directly disposed” or “directlyon” may mean disposing without additional members such as adhesivemembers between two layers or two members.

Hereinafter, an organic electroluminescence display device according tosome example embodiments of the inventive concept will be described withreference to the drawings.

FIG. 1 is a perspective view of an organic electroluminescence displaydevice DD according to some example embodiments. Referring to FIG. 1, anorganic electroluminescence display DD according to some exampleembodiments of the inventive concept includes an organicelectroluminescence display panel DP and an additional member AM locatedon the organic electroluminescence display panel DP. The additionalmember AM may adopt a general one known in the art, for example, aninput sensing unit, an optical member, a window member, and the like.

The input sensing unit may be one that recognizes a direct touch of auser, an indirect touch of a user, a direct touch of an object, or anindirect touch of an object. On the other hand, the input sensing unitmay sense at least one of a position of a touch and a strength(pressure) of a touch, which are applied externally. The input sensingunit according to some example embodiments of the inventive concept mayhave various structures or may be composed of various materials. Forexample, in the display device DD according to some example embodiments,the input sensing unit may be a touch sensing unit that senses a touch.

The optical member may be to shield external light provided to theorganic electroluminescence display panel DP from the outside. Theoptical member may be a polarizing member for blocking external light ora color filter member having a color filter layer. Example embodimentsof the inventive concept are not limited thereto, but the organicelectroluminescence display panel DP according to some exampleembodiments of the inventive concept may not include a separate colorfilter layer or color conversion layer.

The window member may protect the organic electroluminescence displaypanel DP from external forces. The image emitted from the organicelectroluminescence display panel DP may be finally recognized by a userthrough the window member.

The top surfaces of the organic electroluminescence display panel DP andthe additional member AM are parallel to the plane defined by a firstdirectional axis DR1 and a second directional axis DR2. The thicknessdirection of the organic electroluminescence display DD is indicated bya third directional axis DR3. The upper side (or upper part) and thelower side (or lower part) of each of the members are separated by thethird directional axis DR3. However, the directions indicated by thefirst to third directional axes DR1, DR2, DR3 may be converted to otherdirections as relative concepts. Hereinafter, first to third directionsas directions that the respective first to third directional axes DR1,DR2, and DR3 indicate refer to the same reference numerals.

In this specification, “on a plane” may refer to an organicelectroluminescence display device DD viewed in the third direction DR3.

FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments. For example, FIG. 2 is across-section of a portion of an organic electroluminescence displaypanel DP. In FIG. 2, the cutting direction is parallel to the seconddirection DR2, for example, but is not limited thereto.

Referring to FIG. 2, the organic electroluminescence display panel DPincludes a substrate SUB, a first electrode EL1 located on thesubstrate, a first light emitting unit EU1 located on the firstelectrode EL1, a charge generation unit CGLU located on the first lightemitting unit EU1, a second light emitting unit EU2 located on thecharge generation unit CGLU, and a second light emitting unit located onthe second light emitting unit EU2. The organic electroluminescencedisplay panel DP may include only two light emitting units EU1 and EU2and one charge generation unit CGLU between the first electrode EL1 andthe second electrode EL2.

The substrate SUB may be a glass substrate, a metal substrate, a plasticsubstrate, or the like, although it is not particularly limited as longas it is commonly used. The substrate SUB may be a layer made of, forexample, an organic polymer. Examples of the organic polymer for formingthe substrate SUB include polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), polyimide, polyether sulfone, and the like. Thesubstrate SUB may be selected in consideration of mechanical strength,thermal stability, transparency, surface smoothness, ease of handling,and waterproofness.

The first electrode EL1 may be, for example, a pixel electrode, or ananode. The first electrode EL1 may be a reflective electrode, but theembodiment is not limited thereto. For example, the first electrode EL1may be a transmissive electrode or a semi-transmissive electrode. If thefirst electrode EL1 is a semi-transmissive electrode or a reflectiveelectrode, it may be formed of Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir,Cr, Li, Ca, LiF/Ca, LiF/AI, Mo, Ti, a compound thereof, or a mixture(for example, a mixture of Ag and Mg). Alternatively, it may have amultilayer structure including a reflective layer or a semi-transmissivelayer formed of the material, and a transparent conductive layer formedof indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO),and indium tin zinc oxide (ITZO).

The first electrode EL1 includes a plurality of sub-electrodes (e.g.,EL1-1, EL2-2) spaced apart from each other on the substrate SUB.

The first light emitting unit EU1 may include a plurality of lightemitting layers located to be spaced apart from each other. For example,the first light emitting unit EU1 may include a first light emittinglayer EML1 located correspondingly on the first sub-electrode EL1-1 anda second light emitting layer EML2 located correspondingly on the secondlight emitting layer EL1-2. The first light emitting layer EML1 and thesecond light emitting layer EML2 are located apart from each other.

The first light emitting layer EML1 does not overlap with the secondsub-electrode EL1-2 on a plane, and the second light emitting layer EML2does not overlap with the first sub-electrode ELI -1 on a plane.

The first light emitting unit EU1 may further include a first electrodeEU and a first hole transport region HTR1 located between the pluralityof light emitting layers. The first hole transport region HTR1 may becommonly located on the first sub-electrode EL1-1 and the secondsub-electrode EL1-2, and may be commonly located under the first lightemitting layer EML1 and the second light emitting layer EML2.

The first hole transport region HTR1 may adopt any conventionalconfiguration known in the art without limitation.

The first hole transport region HTR1 may have a single layer made of asingle material, a single layer made of a plurality of differentmaterials, or a multi-layered structure having a plurality of layersmade of a plurality of different materials.

The first hole transport region HTR1 may have a structure of a singlelayer made of a plurality of different materials or may have a structureof a hole injection layer/a hole transport layer, a hole injectionlayer/a hole transport layer/a hole buffer layer, a hole injectionlayer/a hole buffer layer, a hole transport layer/a hole buffer layer,or a hole injection layer/a hole transport layer/an electron blockinglayer, which are sequentially stacked from the first electrode EL1.However, example embodiments are not limited thereto.

The first hole transport region HTR1 may be formed using any suitablemethod. For example, the first hole transport region HTR1 may be formedusing various methods such as a vacuum deposition method, spin coating,casting, Langmuir-Blodgett, inkjet printing, laser printing, laserinduced thermal imaging (LITI), and the like.

When the first hole transport region HTR1 includes a hole injectionlayer, it may include a phthalocyanine compound such as copperphthalocyanine, DNTPD(N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4′-diamine),m-MTDATA(4,4′,4″-tris(3-methylphenylphenylamino) triphenylamine),TDATA(4,4′4″-Tris(N,N-diphenylamino)triphenylamine),2TNATA(4,4′,4″-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine),PEDOT/PSS(Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate)),PANI/DBSA(Polyaniline/Dodecylbenzenesulfonic acid),PANI/CSA(Polyaniline/Camphor sulfonicacid),PANI/PSS((Polyaniline)/Poly(4-styrenesulfonate)), and the like, but isnot limited thereto.

When the first hole transport region HTR1 includes a hole transportlayer, it may be a carbazole-based derivative such as N-phenylcarbazoleor polyvinylcarbazole, a fluorene-based derivative,TPD(N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine),a triphenylamine derivative such asTCTA(4,4′,4″-tris(N-carbazolyl)triphenylamine),NPB(N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine), TAPC(4,440-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), and the like,but is not limited thereto.

The thickness of the first hole transport region HTR1 may be, forexample, from about 100 Å to about 10,000 Å, for example, from about 100Å to about 1000 Å.When the first hole transport region HTR1 includesboth the hole injection layer and the hole transport layer, thethickness of the hole injection layer is about 100 Å to about 10,000 Å,for example, about 100 Å to about 1000 Å, and the thickness of the holetransport layer may be about 50 Å to about 2000 Å, for example, about100 Å to about 1500 Å. When the thickness of the first hole transportregion HTR1, the hole injection layer, and the hole transport layersatisfies the above-described ranges, satisfactory hole transportcharacteristics may be obtained without substantial increase in drivingvoltage.

The first hole transport region HTR1 may further include a chargegeneration material for improving the conductivity, in addition to theabove-mentioned materials. The charge generation material may beuniformly or non-uniformly dispersed within the first hole transportregion HTR1. The charge generation material may be, for example, ap-dopant. The p-dopant may be one of quinone derivatives, metal oxides,and cyano group-containing compounds but is not limited thereto. Forexample, non-limiting examples of the p-dopant include quinonederivatives such as TCNQ (tetracyanoquinodimethane) and F4-TCNQ(2,3,4,6-tetrafluoro-tetracyanoquinodimethane), metal oxides such astungsten oxide and molybdenum oxide, and the like but are not limitedthereto.

As described above, the first hole transport region HTR1 may furtherinclude at least one of a hole buffer layer and an electron blockinglayer in addition to a hole injection layer and a hole transport layer.

The first light emitting unit EU1 may further include a first electrontransport region ETR1 located between the plurality of light emittinglayers and the charge generation unit CGLU. The first electron transportregion ETR1 is commonly located on the first light emitting layer EML1and the second light emitting layer EML2 and is located under the chargegeneration unit CGLU.

The first electronic transport region ETR1 may utilize any configurationknown in the art without limitation.

The first electron transport region ETR1 may include at least one of ahole blocking layer, an electron transport layer, and an electroninjection layer, but is not limited thereto.

When the first electron transport region ETR1 includes an electrontransport layer, it may includeAlq3(Tris(8-hydroxyquinolinato)aluminum),TPBi(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl),BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline),Bphen(4,7-Diphenyl-1,10-phenanthroline),TAZ(3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole),NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole),tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole),BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-Biphenyl-4-olato)aluminum),Bebq2(berylliumbis(benzoquinolin-10-olate)),ADN(9,10-di(naphthalene-2-yl)anthracene), and a mixture thereof, but isnot limited thereto. The thickness of the electron transport layer maybe about 100 Å to about 1000 Å, for example about 150 Å to about 500 A.When the thickness of the electron transport layer satisfies theabove-described range, a satisfactory degree of electron transportcharacteristics may be obtained without a substantial increase indriving voltage.

When the first electron transport region ETR1 includes an electroninjection layer, it may use a lanthanum metal such as LiF, LiQ, Li2O,BaO, NaCI, CsF, Yb, or metal halides such as RbCI and RbI, but is notlimited thereto. The electron injection layer may also be made of amixture of an electron transport material and an insulating organo metalsalt. The organo metal salt may be a material having an energy band gapof about 4 eV or more. For example, the organo metal salt may include ametal acetate, a metal benzoate, a metal acetoacetate, a metalacetylacetonate, or a metal stearate. The thickness of the electroninjection layer may be about 1 Å to about 100 Å, for example, about 3 Åto about 90 Å. When the thickness of the electron injection layersatisfies the above-described range, satisfactory electron injectioncharacteristics may be obtained without substantial increase in drivingvoltage.

The first electron transport region ETR1 may include a hole blockinglayer, as mentioned above. The hole blocking layer may include at leastone of BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) andBphen(4,7-diphenyl-1,10-phenanthroline), but is not limited thereto.

The charge generation unit CGLU is located between the first lightemitting unit EU1 and the second light emitting unit EU2 to adjust thecharge balance between the first light emitting unit EU1 and the secondlight emitting unit EU2.

The charge generation unit CGLU includes an n-type charge generationlayer n-CGL located adjacent to the first light emitting unit EU1 and ap-type charge generation layer p-CGL located adjacent to the secondlight emitting unit EU2.

The n-type charge generation layer n-CGL is located on the first lightemitting layer EML1 and the second light emitting layer EML2. The n-typecharge generation layer n-CGL is located on the first sub-electrodeEL1-1 and the second sub-electrode EL1-2. The n-type charge generationlayer n-CGL overlaps both the first light emitting layer EML1 and thesecond light emitting layer EML2 on a plane. The n-type chargegeneration layer n-CGL overlaps both the first sub-electrode EL1-1 andthe second sub-electrode EL1-2 on a plane.

The n-type charge generation layer n-CGL may serve to supply electronsto the first light emitting unit EU1.

The p-type charge generation layer p-CGL includes a plurality ofsub-charge generation layers located on the n-type charge generationlayer n-CGL and spaced apart from each other. For example, the p-typecharge generation layer p-CGL includes a first p-type charge generationlayer p-CGL1 located correspondingly on the first light emitting layerEML1, and a second p-type charge generation layer p-CGL2 locatedcorrespondingly on the second light emitting layer EML2. The firstp-type charge generation layer p-CGL1 and the second p-type chargegeneration layer p-CGL2 are located apart from each other.

The first p-type charge generation layer p-CGL1 does not overlap withthe second sub-electrode EL1-2 on a plane. The first p-type chargegeneration layer p-CGL1 does not overlap with the second light emittinglayer EML2 on a plane.

The second p-type charge generation layer p-CGL2 does not overlap withthe first sub-electrode EL1-1 on a plane. The second p-type chargegeneration layer p-CGL2 does not overlap with the first light emittinglayer EML1 on a plane.

The p-type charge generation layer p-CGL may serve to provide holes tothe second light emitting unit EU2.

The second light emitting unit EU2 may include a plurality of lightemitting layers located to be spaced apart from each other. For example,the second light emitting unit EU2 may include a third light emittinglayer EML3 located correspondingly on the first light emitting layerEML1, and a fourth light emitting layer EML4 located correspondingly onthe second light emitting layer EML2. The third light emitting layerEML3 and the fourth light emitting layer EML4 are located apart fromeach other.

The third light emitting layer EML3 does not overlap with the secondsub-electrode EL1-2 on a plane, and the fourth light emitting layer EML4does not overlap with the first sub-electrode EL1-1 on a plane. Thethird light emitting layer EML3 does not overlap with the secondsub-electrode EL1-2 on a plane, and the fourth light emitting layer EML4does not overlap with the first sub-electrode EL1-1 on a plane.

The second light emitting unit EU2 may further include a second holetransport region HTR2 located between the charge generation unit CGLUand the plurality of light emitting layers. The second hole transportregion HTR2 may be located on the charge generation unit CGLU, and maybe commonly located under the third light emitting layer EML3 and thefourth light emitting layer EML4.

The description of the second hole transport region HTR2 may be equallyapplied to the description of the first hole transport region HTR1. Thefirst hole transport region HTR1 and the second hole transport regionHTR2 are the same or different from each other.

The second light emitting unit EU2 may further include a second electrontransport region ETR2 located between the plurality of light emittinglayers and the second electrode EL2. The second electron transportregion ETR2 is commonly located on the third light emitting layer EML3and the fourth light emitting layer EML4, and is located under thesecond electrode EL2.

The description of the second electron transport region ETR2 may beapplied equally to the above-mentioned description of the first electrontransport region ETR1 described above, so that a detailed descriptionthereof will be omitted. The first electron transport region ETR1 andthe second electron transport region ETR2 are the same or different fromeach other.

The first light emitting layer EML1 and the second light emitting layerEML2 may be layers that emit different colors from each other. Forexample, one of the first light emitting layer EML1 and the second lightemitting layer EML2 is a layer that emits blue light, and the otherlayer is a layer that emits white light that is mixed with blue light.However, the inventive concept is not limited thereto. For example, thefirst light emitting layer EML1 may be a red light emitting layer andthe second light emitting layer EML2 may be a green light emittinglayer.

The third light emitting layer EML3 and the fourth light emitting layerEML4 may be layers that emit different colors from each other. Forexample, one of the third light emitting layer EML3 and the fourth lightemitting layer EML4 is a layer that emits blue light, and the otherlayer is a layer that emits white light that is mixed with blue light.However, the inventive concept is not limited thereto. For example, thethird light emitting layer EML3 may be a red light emitting layer andthe fourth light emitting layer EML4 may be a green light emittinglayer.

The first light emitting layer EML1 and the third light emitting layerEML3 may be a layer emitting the same color, and the second lightemitting layer EML2 and the fourth light emitting layer EML4 may belayers emitting the same color. That is, the light emitting layersemitting light of the same color may be stacked in the thicknessdirection DR3.

FIG. 3 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments.

Referring to FIG. 3, the first electrode EL1 may further include a thirdsub-electrode EL1-3. The third sub-electrode EL1-3 is located on thesubstrate SUB apart from the first sub-electrode EL1-1 and the secondsub-electrode EL1-2.

The first light emitting unit EU1 may further include a fifth lightemitting layer EML5 located correspondingly on the third sub-electrodeEL1-3. The fifth light emitting layer EML5 does not overlap with thefirst sub-electrode ELI -1 and the second sub-electrode EL1-2 on aplane. The fifth light emitting layer EML5 is located apart from thefirst light emitting layer EML1 and the second light emitting layerEML2.

The second light emitting unit EU2 may further include a sixth lightemitting layer EML6 located correspondingly on the fifth light emittinglayer EML5. The sixth light emitting layer EML6 does not overlap withthe first sub-electrode EL1-1 and the second sub-electrode EL1-2 on aplane. The sixth light emitting layer EML6 does not overlap with thefirst light emitting layer EML1 and the second light emitting layer EML2on a plane. The sixth light emitting layer EML6 is located apart fromthe third light emitting layer EML3 and the fourth light emitting layerEML4.

The p-type charge generation layer p-CGL may further include a thirdp-type charge generation layer p-CGL3 located correspondingly on thefifth light emitting layer EMLS. The third p-type charge generationlayer p-CGL3 is located apart from the first p-type charge generationlayer p-CGL1 and the second p-type charge generation layer p-CGL2. Thethird p-type charge generation layer p-CGL3 does not overlap with thefirst sub-electrode EL1-1 and the second sub-electrode EL1-2 on a plane.The third p-type charge generation layer p-CGL3 does not overlap withthe first light emitting layer EML1 and the second light emitting layerEML2 on a plane.

The fifth light emitting layer EML5 and the sixth light emitting layerEML6 may be layers that emit different colors from each other. The fifthlight emitting layer EML5 may be a layer emitting a different color fromeach of the first light emitting layer EML1 and the second lightemitting layer EML2. The sixth light emitting layer EML6 may be a layeremitting a different color from each of the third light emitting layerEML3 and the fourth light emitting layer EML5.

The inventive concept is not limited thereto. Each of the first lightemitting layer EML1 and the third light emitting layer EML3 is a redlight emitting layer. Each of the second light emitting layer EML2 andthe fourth light emitting layer EML4 is a green light emitting layer.Each of the fifth light emitting layer EML5 and the sixth light emittinglayer EML6 may be a blue light emitting layer.

The fifth light emitting layer EML5 may be a layer that emits a firstblue light having a first central wavelength, and the sixth lightemitting layer EML6 may be a layer that emits a second blue light havinga second central wavelength different from the first center wavelength.For example, one of the fifth light emitting layer EML5 and the sixthlight emitting layer EML6 may be a layer that emits blue light having awavelength region of 440 nm or more and less than 460 nm, and the otherone may be a layer that emits blue light having a wavelength region of460 nm or more and 490 nm or less. For example, one of the fifth lightemitting layer EML5 and the sixth light emitting layer EML6 may be alayer that emits deep blue, and the other may be a layer that emits skyblue. By applying two blue light emitting layers having differentcentral wavelengths, blue emission peaks may be broadly distributed,thereby improving color visibility at a side viewing angle. However,example embodiments of the inventive concept are not limited thereto,and the fifth light emitting layer EML5 and the sixth light emittinglayer EML6 may be layers that emit the same blue light.

FIG. 4 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments.

Referring to FIG. 4, the charge generation unit CGLU may further includea buffer layer BF located between an n-type charge generation layern-CGL and a p-type charge generation layer p-CGL. The buffer layer BFoverlaps the first sub-electrode EL1-1 and the second sub-electrodeEL1-2 on a plane. The buffer layer BF overlaps the first light emittinglayer EML1 and the second light emitting layer EML2 on a plane. Thebuffer layer BF may be an insulating layer. The buffer layer BF may be alayer that prevents some of the material of the p-type charge generationlayer p-CGL from being transferred to the n-type charge generation layern-CGL. However, example embodiments of the inventive concept are notlimited thereto, and the n-type charge generation layer n-CGL and thep-type charge generation layer p-CGL may be in contact with each other.

The buffer layer BF may comprise an organic material and/or an inorganicmaterial. The inventive concept is not limited thereto, and the bufferlayer BF may include C60, CuPc, Alq3, Bphen, NPB, or the like.

FIG. 5 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments.

Referring to FIG. 5, the organic electroluminescence display panel DPmay further include a plurality of light-emitting auxiliary layers. Forexample, the first light emitting unit EU1 may include a firstlight-emitting auxiliary layer SR1 and a second light-emitting auxiliarylayer SR2 located apart from each other on the first hole transportregion HTR1. The first light-emitting auxiliary layer SR1 may be locatedbetween the first hole transporting region HTR1 and the first lightemitting layer EML1, and the second light-emitting auxiliary layer SR2may be located between the first hole transporting region HTR1 and thesecond light emitting layer EML2. If the first light emitting unit EU1includes a fifth light emitting layer EML5, it may further include afifth light-emitting auxiliary layer SR5 located between the first holetransporting region HTR1 and the fifth light emitting layer EML5. Thefifth light-emitting auxiliary layer SR5 is located on the first holetransporting region HTR1 apart from each of the first light-emittingauxiliary layer SR1 and the second light-emitting auxiliary layer SR2.

The second light emitting unit EU2 may further include a plurality oflight-emitting auxiliary layers. For example, the second light emittingunit EU2 may include a third light-emitting auxiliary layer SR3 and afourth light-emitting auxiliary layer SR4 located apart from each otheron the second hole transporting region HTR2. A third light-emittingauxiliary layer SR3 may be located between the second hole transportingregion HTR2 and the third light emitting layer EML3, and a fourthlight-emitting auxiliary layer SR4 may be located between the secondhole transporting region HTR2 and the fourth light emitting layer EML4.If the second light emitting unit EU2 includes a sixth light emittinglayer EML6, it may further include a sixth light-emitting auxiliarylayer SR6 located between the second hole transporting region HTR2 andthe sixth light emitting layer EML6. The sixth light-emitting auxiliarylayer SR6 is located on the second hole transporting region HTR2 apartfrom each of the third light-emitting auxiliary layer SR3 and the fourthlight-emitting auxiliary layer SR4.

It is described in FIG. 5 that the first through sixth light-emittingauxiliary layers SRI, SR2, SR3, SR4, SR5, and SR6 have the samethickness. However, example embodiments of the inventive concept is notlimited thereto. Each may have a different thickness. For example, thethickness of the first light-emitting auxiliary layer SR1 is greaterthan the thickness of the second light-emitting auxiliary layer SR2 andthe thickness of the second light-emitting auxiliary layer SR2 may begreater than the thickness of the fifth light-emitting auxiliary layerSRS. For example, the thickness of the third light-emitting auxiliarylayer SR3 is greater than the thickness of the fourth light-emittingauxiliary layer SR4 and the thickness of the fourth light-emittingauxiliary layer SR4 may be greater than the thickness of the sixthlight-emitting auxiliary layer SR6.

FIG. 6 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments.

Referring to FIG. 6, the plurality of light emitting layers of the firstlight emitting unit EU1 may have different thicknesses from each other.For example, the thickness D1 of the first light emitting layer EML1 maybe thicker than the thickness D2 of the second light emitting layerEML2. The thickness of the second light emitting layer EML2 may bethicker than the thickness D5 of the fifth light emitting layer EML5.The first light emitting layer EML1 may be a red light emitting layer.The second light emitting layer EML2 may be a green light emittinglayer. The fifth light emitting layer EML5 may be a blue light emittinglayer.

As the first light emitting layer EML1, the second light emitting layerEML2, and the fifth light emitting layer EML5 have different thicknessesfrom each other, the charge generation unit CGLU, the second lightemitting unit EU2, and the second electrode EL2 located on the upperportion may have a step difference. For example, the n-type chargegeneration layer n-CGL may have a stepped structure, and the firstp-type charge generation layer p-CGL1, the second p-type chargegeneration layer p-CGL2, and the third p-type charge generation layerp-CGL3 may not have a stepped structure.

The plurality of light emitting layers of the second light emitting unitEU2 may also have different thicknesses from each other. For example,the thickness D3 of the third light emitting layer EML3 may be thickerthan the thickness D4 of the fourth light emitting layer EML4. Thethickness D4 of the fourth light emitting layer EML4 may be thicker thanthe thickness D6 of the sixth light emitting layer EML6. The third lightemitting layer EML3 may be a red light emitting layer. The fourth lightemitting layer EML4 may be a green light emitting layer. The sixth lightemitting layer EML6 may be a blue light emitting layer.

The thickness D1 of the first light emitting layer EML1 and thethickness D3 of the third light emitting layer EML3 may be 20 Å or moreto 550 Å or less, respectively. The thickness D2 of the second lightemitting layer EML2 and the thickness D4 of the fourth light emittinglayer EML4 may be 20 Å or more to 300 Å or less, respectively. Thethickness D5 of the fifth light emitting layer EML5 and the thickness D6of the sixth light emitting layer EML6 may be 20 Å or more to 280 Å orless, respectively.

FIG. 7 is a cross-sectional view taken along a line I-I′ of FIG. 1according to some example embodiments.

Referring to FIG. 7, in order to adjust the luminous efficiency of thecorresponding light emitting layer, the first p-type charge generationlayer p-CGL1, the second p-type charge generation layer p-CGL2, and thethird p-type charge generation layer p-CGL3 may have differentthicknesses. For example, the thickness H1 of the first p-type chargegeneration layer p-CGL1 may be larger than the thickness H2 of thesecond p-type charge generation layer p-CGL2, and the thickness H2 ofthe second p-type charge generation layer p-CGL2 may be larger than thethickness H3 of the third p-type charge generation layer p-CGL3.However, the thickness relationship is not limited thereto.

The thickness of the n-type charge generation layer n-CGL may be, forexample, 50 Å or more to 300 Å or less and the thickness of the p-typecharge generation layer p-CGL may be 50 Å or more to 200 Å or less.

The n-type charge generation layer n-CGL may be a single layer of ann-type material, or may be a layer doped with an n-type dopant in anelectron transport material which is a matrix. The electron transportmaterial may adopt any material known in the art without limitation andmay be selected from examples of materials of the first electrontransport region ETR1 described above. The n-type charge generationlayer n-CGL may be layer that includes the same material as any one ofthe electron transport layer or the electron injection layer of thefirst electron transport region (ETR1) as a matrix and is doped with ann-type dopant.

When the n-type charge generation layer n-CGL includes an n-type dopant,the doping ratio of the n-type dopant to the total weight of the n-typecharge generation layer n-CGL may be 1 wt % or more and 10 wt % or less,or 2 wt % or more and 5 wt % or less.

The p-type charge generation layer p-CGL may be a single layer of ap-type material, or may be a layer doped with a p-type dopant in a holetransport material which is a matrix. The hole transport material mayadopt any material known in the art without limitation and may beselected from examples of materials of the first hole transport regionETR1 described above. The p-type charge generation layer p-CGL may be alayer that includes the same material as any one of the hole injectionlayer and the hole transport layer of the first hole transporting regionHTR1 as a matrix and is doped with a p-type dopant.

When the p-type charge generation layer p-CGL includes a p-type dopant,the doping ratio of the p-type dopant to the total weight of the p-typecharge generation layer p-CGL may be 2 wt % or more and 15 wt % or less.By adjusting the thicknesses of the first p-type charge generation layerp-CGL1, the second p-type charge generation layer p-CGL2, and the thirdp-type charge generation layer p-CGL3 to be the same and the dopingratios to be different from each other, emitting efficiency of thecorresponding light emitting layer may be adjusted.

However, example embodiments of the inventive concept are not limitedthereto, and the n-type charge generation layer n-CGL may be doped withan inorganic material, and the p-type charge generation layer p-CGL maybe doped with an organic material or an inorganic material. For example,the n-type charge generation layer n-CGL may be doped with Yb and thep-type charge generation layer p-CGL may be doped with an organiccompound containing a cyano group and a fluorine atom. For example, then-type charge generation layer n-CGL may be doped with Yb and the p-typecharge generation layer p-CGL may be doped with an organic compoundcontaining a cyano group, a fluorine atom and cyclopropane in onemolecule. However, the inventive concept is not limited thereto. Forexample, the p-type charge generation layer p-CGL may also be doped withan inorganic material and may be doped with at least one of WO3, MoO3,and VOx. The p-type charge generation layer p-CGL may be doped with ametal halide, for example, Cul, Agl, Bil3, ZrI4, or MnI2. The p-typecharge generation layer p-CGL may be doped with Cul.

FIG. 8 is a schematic cross-sectional view taken along a line I-I′ ofFIG. 1 according to some example embodiments. FIG. 8 is across-sectional view that a configuration on the first electrodes EL1-1,EL1-2, and EL1-3 are omitted from the section taken along the line I-I′of FIG. 1.

Referring to FIG. 8, the organic electroluminescence display panel DPmay include a non-light emitting region NPXA and light emitting regionsPXA-1, PXA-2, and PXA-3. Each of the light emitting regions PXA-1,PXA-2, and PXA-3 may be a region in which light generated from the firstlight emitting unit EU1 and the second light emitting unit EU2 isemitted.

A pixel defining layer PDL may be located on a part of each of the firstsub-electrodes EL1-1, EL1-2, and EL1-3 and on the substrate SUB. Thepixel defining layer PDL may be partitioned to correspond to each of thelight emitting regions PXA-1, PXA-2, and PXA-3. The pixel defining layerPDL may be located corresponding to the non-light emitting region NPXA.

The pixel defining layer PDL may be formed of a polymer resin. Forexample, the pixel defining layer PDL may include a polyacrylate resinor a polyimide resin. In addition, the pixel defining layer PDL may beformed by further including an inorganic material in addition to thepolymer resin. On the other hand, the pixel defining layer PDL may beformed to include a light absorbing material, or may include a blackpigment or a black dye. The pixel defining layer PDL formed with a blackpigment or a black dye may implement a black pixel defining layer. Informing the pixel defining layer PDL, black pigment or carbon black maybe used as the black dye, but the embodiment is not limited thereto.

In addition, the pixel defining layer PDL may be formed of an inorganicmaterial. For example, the pixel defining layer PDL may be formed ofsilicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride(SiOxNy), or the like.

The substrate SUB may include a base layer BL and a circuit layer DP-CLlocated on the base layer BL. A first light emitting region PXA-1, asecond light emitting region PXA-2, and a third light emitting regionPXA-3, which are spaced apart from each other, may be defined on thesubstrate SUB.

The base layer BL may be a glass substrate, a metal substrate, a plasticsubstrate, or the like. The base layer BL may be an inorganic layer oran organic layer or a composite layer. A more detailed description ofthe circuit layer DP-CL will be given later.

Referring to FIGS. 2 to 8, the first sub-electrode EL1-1 may be locatedcorresponding to the first light emitting region PXA-1. The secondsub-electrode EL1-2 may be located corresponding to the second lightemitting region PXA-2. The third sub-electrodes EL1-3 may be locatedcorresponding to the third light emitting region PXA-3.

Each of the first electron transport region HTR1, the first electrontransport region ETR1, the second hole transport region HTR2, and thesecond electron transport region ETR2 may be commonly located in thenon-light emitting region NPXA and the third light emitting regionsPXA-1, PXA-2, and PXA-3. The upper surface of each of the firstsub-electrodes EL1-1, EL1-2 and EL1-3 is partially exposed by an openingOH defined in the pixel defining layer PDL, and the first hole transportregion HTR1, the first electron transport region ETR1, the second holetransport region HTR2, and the second electron transport region ETR2 arecommonly located on the upper portion of the pixel defining layer PDLand in the opening OH. In other words, the first hole transport regionHTR1, the first electron transport region ETR1, the second holetransport region HTR2, and the second electron transport region ETR2 maybe arranged integrally without distinguishing the non-light emittingregion NPXA and the light emitting regions PXA-1, PXA-2, and PXA-3.

The second electrode EL2 may be commonly located in the non-lightemitting region NPXA and the first to third light emitting regionsPXA-1, PXA-2, and PXA-3. However, the inventive concept is not limitedthereto. Although not shown in the drawing, the second electrode EL2 mayinclude a plurality of sub-electrodes located corresponding to the lightemitting regions PXA-1, PXA-2, and PXA-3, respectively.

The n-type charge generation layer n-CGL is a layer that is commonlylocated in the non-light emitting region NPXA and the first to thirdlight emitting regions PXA-1, PXA-2, and PXA-3. A portion of the n-typecharge generation layer n-CGL may be located on the pixel defining layerPDL.

The p-type charge generation layer p-CGL is a layer that is not locatedin the non-light emitting region NPXA. The p-type charge generationlayer p-CGL includes a first p-type charge generation layer p-CGL1arranged corresponding to the first light emitting region PXA-1, asecond p-type charge generation layer p-CGL2 arranged corresponding tothe second light emitting region PXA-2, and a third p-type chargegeneration layer p-CGL3 arranged corresponding to the third lightemitting region PXA-3, and is not located on the pixel defining layerPDL.

The first to sixth light emitting layers EML6 are layers not located inthe non-light emitting region NPXA such as the p-type charge generationlayer p-CGL, and are not located on the pixel defining layer PDL. Forexample, the first light emitting layer EML1 may be located on the uppersurface of the first sub-electrode EL1-1 exposed by the opening OHdefined in the pixel defining layer PDL. The second light emitting layer

EML2 is located on the upper surface of the second sub-electrode EL1-2exposed by the opening OH. The fifth light emitting layer EML5 may belocated on the upper surface of the third sub-electrode EL1-3 exposed bythe opening OH.

It is described as an example in FIG. 8 that the areas of the first tothird light emitting regions PXA-1, PXA-2, and PXA-3 are the same, butthe inventive concept is not limited thereto. For example, the firstlight emitting region PXA-1 and the third light emitting region PXA-3may have a larger area than the second light emitting region PXA-2.

FIGS. 9 to 11 are cross-sectional views sequentially illustrating amethod of manufacturing a charge generation unit included in an organicelectroluminescence display device according to some example embodimentsof the inventive concept.

Referring to FIG. 9, after the first to third sub-electrodes EL1-1, ELI-2, and ELI -3, which are spaced apart from each other, are formed firston the substrate SUB including the base layer BL and the circuit layerDP-CL, the pixel defining layer PDL is formed, so that the non-lightemitting region NPXA and the first to third light emitting regionsPXA-1, PXA-2, and PXA-3 are defined on the substrate SUB. Then, thefirst light emitting unit EU1 is formed over the non-light emittingregion NPXA and the first to third light emitting regions PXA-1, PXA-2and PXA-3. The method of forming the first light emitting unit EU1 mayadopt a general method known in the art without limitation. Theoutermost layer of the first light emitting unit EU1 is formed over thenon-light emitting region NPXA and the first to third light emittingregions PXA-1, PXA-2, and PXA-3. For convenience of explanation, it isillustrated that the first light emitting unit EU1 is formed as a commonlayer. However, the first light emitting layer EML1 (see, e.g., FIG. 3),the second light emitting layer EML2 (see, e.g., FIG. 3), and the fifthlight emitting layer EML5 (see, e.g., FIG. 3) may be formed only at thecorresponding position of the opening OH.

Next, referring to FIG. 10, an n-type charge generation layer n-CGL isformed on the first light emitting unit EU1. The n-type chargegeneration layer n-CGL is a layer that is formed over the non-lightemitting region NPXA and the first to third light emitting regionsPXA-1, PXA-2, and PXA-3.

Next, referring to FIG. 11, a p-type charge generation layer p-CGL isformed on the n-type charge generation layer n-CGL. The p-type chargegeneration layer p-CGL may be formed using a first mask FMM1 having aplurality of openings OP1, OP2 and OP3. The first mask FMM1 may be, forexample, a fine metal mask.

The first opening OP1 corresponding to the first light emitting regionPXA-1, the second opening OP2 corresponding to the second light emittingregion PXA-2, and the third opening OP3 corresponding to the thirdopening PXA-3 are defined in the first mask FMM1. The p-type chargegeneration layer p-CGL is patterned and formed only in regionscorresponding to the first to third openings OP1, OP2, and OP3.Specifically, the first p-type charge generation layer p-CGL1 is formedonly in the region corresponding to the first opening OP1. The secondp-type charge generation layer p-CGL2 is formed only in the regioncorresponding to the second opening OP2. The third p-type chargegeneration layer p-CGL3 is formed only in the region corresponding tothe third opening OP3.

That is, the forming of the charge generation unit CGLU includes formingthe n-type charge generation layer n-CGL to be performed without using amask, and forming the p-type charge generation layer p-CGL to beperformed using the first mask FMM1.

FIG. 12 is an equivalent circuit diagram of a pixel according to someexample embodiments of the inventive concept. FIG. 13 is across-sectional view of a display panel according to some exampleembodiments of the inventive concept.

FIG. 12 shows a scan line GL, a data line DL, a power supply line PL,and a pixel PX connected thereto. On the other hand, the configurationof the pixel PX is not limited to that shown in FIG. 12 but may bemodified and implemented.

The pixel PX includes a first transistor T1 (or a switching transistor),a second transistor T2 (or a driving transistor), and a capacitor Cst asa pixel driving circuit for driving the organic electroluminescenceelement OEL. The first power source voltage ELVDD is supplied to thesecond transistor T2 and the second power source voltage ELVSS issupplied to the organic electroluminescence element OEL. The secondvoltage ELVSS may have a lower level than the first voltage ELVDD. Theorganic electroluminescence device OEL includes the first electrode EL1(see, e.g., FIG. 2), the first light emitting unit EU1 (see, e.g., FIG.2), the charge generation unit CGLU (see, e.g., FIG. 2), the secondlight emitting unit EU2 (see, e.g., FIG. 2), and the second electrodeEL2 (see, e.g., FIG. 2).

The first transistor T1 outputs a data signal applied to the data lineDL in response to a scan signal applied to the scan line GL. Thecapacitor Cst charges a voltage corresponding to a data signal receivedfrom the first transistor T1. The second transistor T2 is connected tothe organic electroluminescence element OEL. The second transistor T2controls a driving current flowing through the organicelectroluminescence element OEL in correspondence to a charge amountstored in the capacitor Cst.

The equivalent circuit is only an embodiment and is not limited thereto.The pixel PX may further include a plurality of transistors, and mayinclude a larger number of capacitors. The organic electroluminescenceelement OEL may be connected between the power supply line PL and thesecond transistor T2.

FIG. 13 is a partial cross-sectional view of an organicelectroluminescence display panel DP in an embodiment corresponding tothe equivalent circuit shown in FIG. 12. The organic electroluminescencedisplay panel DP includes a substrate SUB including a circuit layerDP-CL, an insulating layer IL located on the substrate SUB, a firstelectrode EL1 and a pixel defining layer PDL located on the insulatinglayer IL. In FIG. 13, for convenience of explanation, componentsarranged on the first electrode EL1 are omitted and shown.

The circuit layer DP-CL is located on the base layer BL, and may includea buffer film BFL which is an inorganic film. The buffer film BFL mayprevent diffusion of impurities to the first and second transistors T1and T2. The buffer film BFL may be formed of silicon nitride (SiNx),silicon oxide (SiOx), silicon oxynitride (SiOxNy), or the like. On theother hand, the buffer film BFL may be omitted depending on the materialand the process conditions of the base layer BL.

A semiconductor pattern SP1 (hereinafter referred to as a firstsemiconductor pattern) of the first transistor T1 and a semiconductorpattern SP2 (hereinafter referred to as a second semiconductor pattern)of the second transistor T2 may be located on the buffer film BFL. Thefirst semiconductor pattern SP1 and the second semiconductor pattern SP2may be selected from amorphous silicon, poly silicon, or a metal oxidesemiconductor.

A first intermediate inorganic film 10 may be located on the firstsemiconductor pattern SP1 and the second semiconductor pattern SP2. Acontrol electrode GE1 (hereinafter referred to as a first controlelectrode) of the first transistor T1 and a control electrode GE2(hereinafter referred to as a second control electrode) of the secondtransistor T2 may be located on the first intermediate inorganic film10. The first control electrode GE1 and the second control electrode GE2may be manufactured by the same photolithography process as the scanlines GL.

The second intermediate inorganic film 20 covering the first controlelectrode GE1 and the second control electrode GE2 may be located on thefirst intermediate inorganic film 10. An input electrode DE1(hereinafter referred to as a first input electrode) and an outputelectrode SE1 (hereinafter referred to as a first output electrode) ofthe first transistor T1 and an input electrode DE2 (hereinafter referredto as a second input electrode) and an output electrode SE2 (hereinafterreferred to as a second output electrode) of the second transistor T2may be located on the second intermediate inorganic film 20.

The first input electrode DE1 and the first output electrode SE1 areconnected to the first semiconductor pattern SP1 through the firstcontact hole CH1 and the second contact hole CH2 penetrating the firstintermediate inorganic film 10 and the second intermediate inorganicfilm 20. The second input electrode DE2 and the second output electrodeSE2 are electrically connected to the second semiconductor pattern SP2through the third contact hole CH3 and the fourth contact hole CH4penetrating the first intermediate inorganic film 10 and the secondintermediate inorganic film 20. On the other hand, according to anotherembodiment of the inventive concept, some of the first transistor T1 andthe second transistor T2 may be modified as a bottom gate structure andimplemented.

An insulating layer IL may be located on the substrate SUB including thecircuit layer DP-CL. An insulating layer IL covering the first inputelectrode DE1, the second input electrode DE2, the first outputelectrode SE1, and the second output electrode SE2 may be located on thesecond intermediate inorganic film 20. A hole may be defined in theinsulating layer IL. In addition, the insulating layer IL may provide aflat surface to the circuit layer DP-CL at portions other than theholes. The insulating layer IL may be an organic film. For example, theinsulating layer IL may be formed including polyimide or the like. Thehole defined in the insulating layer IL may be a via hole penetrating aninsulating layer. The first electrode EL1 and the pixel defining layerPDL may be located on the insulating layer IL, and a light emittingregion PXA may be defined by a pixel defining layer PDL. One pixel PX(see FIG. 12) may be located in one light emitting region PXA, but isnot limited thereto.

Referring again to FIGS. 2 to 8, an organic electroluminescence displaypanel (DP) according to some example embodiments will be described inmore detail.

The organic electroluminescence display panel DP includes a firstelectrode EL1, a first light emitting unit EU1, a charge generation unitCGLU, a second light emitting unit EU2, and a second electrode EL2. Afirst light emitting region PXA-1, a second light emitting region PXA-2,and a third light emitting region PXA-3, which are spaced apart fromeach other, are defined on the substrate SUB.

A first electrode EL1 is located on the substrate SUB. The firstelectrode EL1 includes first sub-electrode EL1-1 arranged correspondingto the first light emitting region PXA-1, a second sub-electrode EL1-2arranged corresponding to the second light emitting region PXA-2, and athird sub-electrode EL1-3 located corresponding to the third lightemitting region PXA-3.

A first light emitting unit EU1 is located on the first electrode EL1.The first light emitting unit EU1 includes a first sub-light emittinglayer EML1 arranged corresponding to the first light emitting regionPXA-1, a second sub-light emitting layer EML2 arranged corresponding tothe second light emitting region PXA-2, and a third sub-light emittinglayer EML5 arranged corresponding to the third light emitting regionPXA-3.

A charge generation unit CGLU is located on the first light emittingunit EU1. The charge generation unit CGLU includes an n-type chargegeneration layer n-CGL commonly located in the first light emittingregion PXA-1, the second light emitting region PXA-2, and the thirdlight emitting region PXA-3. The n-type charge generation layer n-CGL isalso arranged in a non-light emitting region NPXA. The charge generationunit CGLU is located on the n-type charge generation layer n-CGL andincludes a p-type charge generation layer p-CGL including a first p-typecharge generation layer p-CGL1 arranged corresponding to the first lightemitting region PXA-1, a second p-type charge generation layer p-CGL2arranged corresponding to the second light emitting region PXA-2, and athird p-type charge generation layer p-CGL3 arranged corresponding tothe third light emitting region PXA-3.

A second light emitting unit EU2 is located on the charge generationunit CGLU. The second light emitting unit EU2 includes a fourthsub-light emitting layer EML3 arranged corresponding to the first lightemitting region PXA-1, a fifth sub-light emitting layer EML4 arrangedcorresponding to the second light emitting region PXA-2, and a sixthsub-light emitting layer EML6 arranged corresponding to the third lightemitting region PXA-3.

Unless otherwise noted, a detailed description of the first electrodeEL1, the first light emitting unit EU1, the charge generation unit CGLU,the second light emitting unit EU2, and the second electrode EL2 isomitted because the above description is applied identically.

The description of the first light emitting layer EML1 may beidentically applied to the first sub-light emitting layer EML1. Thedescription of the second light emitting layer EML2 may be identicallyapplied to the second sub-light emitting layer EML2. The description ofthe fifth light emitting layer EML5 may be identically applied to thethird sub-light emitting layer EML5. In addition, the description of thethird light emitting layer EML3 may be identically applied to the fourthsub-light emitting layer EML3. The description of the fourth lightemitting layer EML4 may be identically applied to the fifth sub-lightemitting layer EML4. The description of the sixth light emitting layerEML6 may be identically applied to the sixth sub-light emitting layerEML6. For example, each of the first sub-light emitting layer EML1 andthe fourth sub-light emitting layer EML3 is a red light emitting layer.Each of the second sub-light emitting layer EML2 and the sub-fifth lightemitting layer EML4 is a green light emitting layer. Each of the thirdsub-light emitting layer EML5 and the sixth sub-light emitting layerEML6 may be a blue light emitting layer.

An organic electroluminescence display DD (see, e.g., FIG. 1) accordingto some example embodiments of the inventive concept includes two lightemitting units EU1 and EU2 and a charge generation unit CGLU locatedbetween the two light emitting units EU1 and EU2. The two light emittingunits EU1 and EU2 are stacked in the thickness direction DR3. As aresult, the organic electroluminescence display DD has excellentefficiency compared to an organic electroluminescence display deviceincluding only one light emitting unit and may have a relatively longerlife span. In addition, the organic electroluminescence display DD (seeFIG. 1) according to some example embodiments of the inventive conceptmay also have excellent in heat resistance.

According to the high resolution requirement of the display device, asmore masking processes including opening are added, the effect of lowerprocess yield is increasing. The organic electroluminescence displaydevice DD (see, e.g., FIG. 1) according to an embodiment of theinventive concept includes an n-type charge generation layer n-CGLarranged as a common layer without distinguishing light emittingregions, and a charge generation unit CGLU including a p-type chargegeneration layer p-CGL arranged as a pattern layer in correspondence toeach light emitting region. In other words, it includes an n-type chargegeneration layer n-CGL arranged without using a mask and a p-type chargegeneration layer p-CGL arranged using a mask. As a result, theprocessing and manufacturing efficiency may be superior to that of anorganic electroluminescence display device in which both the n-typecharge generation layer and the p-type charge generation layer arearranged as pattern layers.

On the other hand, when the n-type charge generation layer and thep-type charge generation layer are all arranged as common layers, theamount of leakage current generated due to the charge flowing in thelongitudinal direction is increased. Leakage current may mean that thecharge flows into the undesired luminescent region, which may cause poorcolor mixing.

FIG. 14 is a graph showing a change in conductivity depending on thedoping concentration of each of an n-type charge generation layer and ap-type charge generation layer.

Referring to FIG. 14, it may be seen that the p-type charge generationlayer has a greater conductivity difference depending on the dopingconcentration than the n-type charge generation layer. That is, thep-type charge generation layer is more sensitive to the dopingconcentration change than the n-type charge generation layer. Therefore,it may be predicted that the leakage current is relatively increased inthe case of the p-type charge generation layer in which the conductivityincreases sharply as the doping concentration increases. Therefore, someexample embodiment of the inventive concept may include an organicelectroluminescence display device in which the p-type charge generationlayer, which has a high probability of causing a color mixture defectdue to the flow of charge in the length direction, is arranged as apattern layer and the n-type charge generation layer, which isrelatively unlikely to generate a leakage current, is arranged as acommon layer to realize excellent process efficiency, high efficiency,and long life span.

An organic electroluminescence display device according to some exampleembodiments of the inventive concept may have excellent efficiency andhave a relatively long life span.

A method of manufacturing an organic electroluminescence display deviceaccording to some example embodiments of the inventive concept may alsohave a relatively efficient manufacturing process.

Although aspects of some example embodiments of the inventive concepthave been described, it is understood that the inventive concept shouldnot be limited to these example embodiments but various changes andmodifications can be made by one ordinary skilled in the art within thespirit and scope of the inventive concept as defined in the appendedclaims and their equivalents.

What is claimed is:
 1. An organic electroluminescence display devicecomprising: a substrate including a first light emitting region, asecond light emitting region, and a non-light emitting region betweenthe first light emitting region and the second light emitting region; afirst electrode including a first sub-electrode on the first lightemitting region and a second sub-electrode on the second light emittingregion; a pixel defining layer on the non-light emitting region; a firstlight emitting unit on the first electrode; a charge generation unitincluding an n-type charge generation layer on the first light emittingunit and a p-type charge generation layer on the n-type chargegeneration layer; a second light emitting unit on the charge generationunit; and a second electrode on the second light emitting unit, whereinthe first light emitting unit comprises a first light emitting layer onthe first sub-electrode; and a second light emitting layer on the secondsub-electrode, wherein the second light emitting unit comprises a thirdlight emitting layer on the first light emitting layer; and a fourthlight emitting layer on the second light emitting layer, wherein then-type charge generation layer is arranged as a common layer on thefirst light emitting region, the second light emitting region, and thenon-light emitting region; and the p-type charge generation layerincludes a first p-type charge generation layer arranged as a patternlayer corresponding to the first light emitting region and a secondp-type charge generation layer arranged as a pattern layer correspondingto the second light emitting region.
 2. The device of claim 1, whereinthe first light emitting layer and the third light emitting layer emitlight of a same color, the second light emitting layer and the fourthlight emitting layer emit light of a same color, and the first lightemitting layer and the second light emitting layer emit light ofdifferent colors.
 3. The device of claim 1, wherein the first p-typecharge generation layer and the second p-type charge generation layerare spaced apart from each other.
 4. The device of claim 1, wherein thefirst p-type charge generation layer is on the first light emittinglayer, and the second p-type charge generation layer is on the secondlight emitting layer.
 5. The device of claim 4, wherein the substratefurther comprises a third light emitting region spaced apart from thefirst light emitting region and the second light emitting region, thefirst electrode further comprises a third sub-electrode on the thirdlight emitting region, and the third sub-electrode is spaced apart fromthe first sub-electrode and the second sub-electrode, the first lightemitting unit further comprises a fifth light emitting layer on thethird sub-electrode, the second light emitting unit further comprises asixth light emitting layer on the fifth light emitting layer, and thep-type charge generation layer further comprises a third p-type chargegeneration layer on the fifth light emitting layer.
 6. The device ofclaim 5, wherein the fifth light emitting layer and the sixth lightemitting layer emit light of a same color, and the fifth light emittinglayer emits light of a different color from each of the first lightemitting layer and the second light emitting layer.
 7. The device ofclaim 5, wherein each of the first light emitting layer and the thirdlight emitting layer is a red light emitting layer, each of the secondlight emitting layer and the fourth light emitting layer is a greenlight emitting layer, and each of the fifth light emitting layer and thesixth light emitting layer is a blue light emitting layer.
 8. The deviceof claim 7, wherein the fifth light emitting layer emits a first bluelight having a first central wavelength, and the sixth light emittinglayer emits a second blue light having a second central wavelengthdifferent from the first central wavelength.
 9. The device of claim 5,wherein a thickness of the first light emitting layer is greater than athickness of the second light emitting layer, and the thickness of thesecond light emitting layer is greater than a thickness of the fifthlight emitting layer, and a thickness of the third light emitting layeris greater than a thickness of the fourth light emitting layer and thethickness of the fourth light emitting layer is greater than a thicknessof the sixth light emitting layer.
 10. The device of claim 1, whereinthe pixel defining layer comprises a polyacrylate resin or a polyimideresin.
 11. The device of claim 1, wherein the n-type charge generationlayer has a step difference, and each of the first p-type chargegeneration layer and the second p-type charge generation layer has nostep difference.
 12. The device of claim 1, wherein the first lightemitting unit further comprises: a first hole transport layer below thefirst light emitting layer and the second light emitting layer, and onthe first sub-electrode and the second sub-electrode; and a firstelectron transport layer on the first light emitting layer and on thesecond light emitting layer, and below the charge generation unit,wherein the second light emitting unit further comprises: a second holetransport layer below the third light emitting layer and the fourthlight emitting layer, and on the charge generation unit; and a secondelectron transport layer on the third light emitting layer and thefourth light emitting layer, and below the second electrode.
 13. Thedevice of claim 1, wherein a thickness of the n-type charge generationlayer is 50 Å to 300 Å, and a thickness of the p-type charge generationlayer is 50 Å to 200 Å.
 14. The device of claim 1, wherein the n-typecharge generation layer comprises an n-type dopant, and the p-typecharge generation layer comprises a p-type dopant, a doping ratio of then-type dopant is 1 wt % to 10 wt %, and a doping ratio of the p-typedopant is 2 wt % to 15 wt %.
 15. An organic electroluminescence displaydevice comprising: a substrate including a first light emitting region,a second light emitting region, and a non-light emitting region; a firstelectrode including a first sub-electrode on the first light emittingregion and a second sub-electrode on the second light emitting region; afirst light emitting unit on the first electrode; a charge generationunit including an n-type charge generation layer on the first lightemitting unit and a p-type charge generation layer on the n-type chargegeneration layer; a second light emitting unit on the charge generationunit; and a second electrode on the second light emitting unit, whereinthe first light emitting unit comprises a first light emitting layer onthe first sub-electrode; and a second light emitting layer on the secondsub-electrode, wherein the second light emitting unit comprises a thirdlight emitting layer on the first light emitting layer; and a fourthlight emitting layer on the second light emitting layer, wherein one ofthe n-type charge generation layer and the p-type charge generationlayer includes a first sub charge generation layer on the first lightemitting region and a second sub charge generation layer on the secondlight emitting region.
 16. The device of claim 15, wherein another ofthe n-type charge generation layer and the p-type charge generationlayer overlaps the first light emitting region, the second lightemitting region, and the non-light emitting region.
 17. The device ofclaim 15, wherein the non-light emitting region is between the firstlight emitting region and the second light emitting region, and whereinthe device further comprises a partition part on the substratecorresponding to the non-light emitting region.
 18. The device of claim17, wherein the partition part comprises a polyacrylate resin or apolyimide resin.
 19. The device of claim 15, wherein the substratefurther comprises a third light emitting region spaced apart from thefirst light emitting region and the second light emitting region, thefirst electrode further comprises a third sub-electrode spaced apartfrom the first sub-electrode and the second sub-electrode, the firstlight emitting unit further comprises a fifth light emitting layercorrespondingly on the third sub-electrode, and the second lightemitting unit further comprises a sixth light emitting layercorrespondingly on the fifth light emitting layer.
 20. The device ofclaim 19, wherein the n-type charge generation layer is arranged as acommon layer on the first light emitting region, the second lightemitting region, the third light emitting region and the non-lightemitting region; and wherein the p-type charge generation layer includesa first p-type charge generation layer arranged as a pattern layercorresponding to the first light emitting region, and a second p-typecharge generation layer arranged as a pattern layer corresponding to thesecond light emitting region, and a third p-type charge generation layerarranged as a pattern layer corresponding to the third light emittingregion.
 21. The device of claim 20, wherein the third p-type chargegeneration layer is on the fifth light emitting layer.
 22. The device ofclaim 19, wherein each of the first light emitting layer and the thirdlight emitting layer is a red light emitting layer, each of the secondlight emitting layer and the fourth light emitting layer is a greenlight emitting layer, and each of the fifth light emitting layer and thesixth light emitting layer is a blue light emitting layer.
 23. Anorganic electroluminescence display device comprising: a display panel;and an input sensing unit on the display panel, wherein the displaypanel comprises: a substrate including a first light emitting region, asecond light emitting region, and a non-light emitting region; a firstelectrode including a first sub-electrode on the first light emittingregion and a second sub-electrode on the second light emitting region; afirst light emitting unit on the first electrode; a charge generationunit including an n-type charge generation layer on the first lightemitting unit and a p-type charge generation layer on the n-type chargegeneration layer; a second light emitting unit on the charge generationunit; and a second electrode on the second light emitting unit, whereinthe first light emitting unit comprises a first light emitting layer onthe first sub-electrode; and a second light emitting layer on the secondsub-electrode, wherein the second light emitting unit comprises a thirdlight emitting layer on the first light emitting layer; and a fourthlight emitting layer on the second light emitting layer, wherein one ofthe n-type charge generation layer and the p-type charge generationlayer includes a first sub charge generation layer on the first lightemitting region and a second sub charge generation layer on the secondlight emitting region.